2SC4500(l)/(s) silicon npn epitaxial application low frequency amplifier outline 4 1 2 3 4 3 2 1 1. base
2. collector
3. emitter
4. collector dpak s type l type 1 2, 4 3
2SC4500(l)/(s) 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 7v collector current i c 1a collector peak current i c (peak) 2a collector power dissipation p c 0.8 w p c * 1 8 junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 60 v i c = 1 ma, r be = _ emitter to base breakdown voltage v (br)ebo 7vi e = 0.1 ma, i c = 0 collector cutoff current i cbo 10av cb = 60 v, i e = 0 dc current transfer ratio h fe 2000 v ce = 10 v, i c = C500 ma* 1 collector to emitter saturation voltage v ce (sat) 1.5 v i c = 500 ma, i b = 0.5 ma* 1 base to emitter saturation voltage v be (sat) 2.0 v i c = 500 ma, i b = 0.5 ma* 1 turn on time t on 100 ns v cc = 12 v, ic = 250 ma, i b1 = Ci b2 = 5 ma turn off time t off 600 ns note: 1. pulse test.
2SC4500(l)/(s) 3 maximum collector dissipation curve 12 8 4 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 3.0 1.0 0.3 0.1 0.03 collector current i c (a) 1.0 3 30 10 100 collector to emitter voltage v ce (v) dc operation(t c = 25 c) pw = 10 ms 1 ms area of safe operation 100 m s ta = 25 c, 1 shot pulse typical output characteristics i b = 0, ta = 25 c 80 m a 100 120 120 140 160 200 180 1.0 0.8 0.6 0.4 0.2 012 collector to emitter voltage v ce (v) 5 4 3 collector current i c (a)
2SC4500(l)/(s) 4 100,000 30,000 10,000 3,000 1,000 0.01 0.1 1.0 0.03 0.3 dc current transfer ratio h fe collector current i c (a) dc current transfer ratio vs.
collector current v ce = 10 v
ta = 25 c saturation voltage vs. collector current 10 3 1.0 0.3 0.1 0.01 0.3 0.03 0.1 1.0 collector current i c (a) collector to emitter saturation voltage v ce(sat) (v)
base to emitter saturation voltage v be(sat) (v) v be(sat) v ce(sat) i c = 1000 i b
ta = 25 c
2SC4500(l)/(s) 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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